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sfh 7222 gaalas-ir-lumineszenzdio de (880 nm) und grne gap-led (565 nm) gaalas-infrared-emitter (880 nm) and green gap-led (565 nm) lead (pb) free produc t - rohs compliant 2007-04-02 1 wesentliche merkmale ? smt-geh?use mit ir-sender (880 nm) und grnem sender (565 nm) ? geeignet fr smt-bestckung ? gegurtet lieferbar ? sender und empf?nger getrennt ansteuerbar anwendungen ? kombination von anzeigeelement mit: ? datenbertragung ? fernsteuerung ? infrarotschnittstelle typ type bestellnummer ordering code geh?use package sfh 7222 Q65110A2742 smt multi topled ? features ? smt package with ir emitter (880 nm) and green emitter (565 nm) ? suitable for smt assembly ? available on tape and reel ? emitter und detector can be controlled separately applications ? combination of display with: ? data transmission ? remote control ? infrared interface
2007-04-02 2 sfh 7222 hinweis/notes die angegebenen grenzdaten gelten fr einen chip, wenn nicht anders angegeben. the stated maximum ratings refer to one chip, unless otherwise specified. grenzwerte maximum ratings bezeichnung parameter symbol symbol wert value einheit unit ired led betriebstemperatur operating temperature range t op ? 40 ? + 100 ? 40 ? + 100 c lagertemperatur storage temperature range t stg ? 40 ? + 100 ? 40 ? + 100 c sperrspannung reverse voltage v r 5 5 v durchlassstrom forward current i f (dc) 100 30 ma sto?strom surge current t p 10 s, d = 0 i fsm 2.5 0.5 a verlustleistung total power dissipation p tot 180 100 mw w?rmewiderstand thermal resistance junction/ambient 1) r th ja 450 500 k/w w?rmewiderstand thermal resistance junction/ambient 2) r th ja 650 k/w 1) nur ein chip betrieben / only one chip on 2) beide chips betrieben / both chips on
sfh 7222 2007-04-02 3 kennwerte ( t a = 25 c) characteristics bezeichnung parameter symbol symbol wert value einheit unit ired led wellenl?nge der strahlung wavelength of peak emission i f = 100 ma peak 880 565 ( i f = 10 ma) nm dominantwellenl?nge dominant wavelength i f = 10 ma dom ? 570 nm spektrale bandbreite bei 50% von i max spectral bandwidth at 50% of i max i f = 100 ma ? 80 25 ( i f = 10 ma) nm abstrahlwinkel half angle ? 60 60 grad deg. abmessungen der aktiven chipfl?che dimensions of the active chip area l b l w 0.4 0.4 0.25 0.25 mm 2 schaltzeiten switching times 10%/90%, i f = 100 ma, r l = 50 t r , t f 500 450, 200 ns kapazit?t capacitance v r = 0 v, f = 1 mhz c o 25 15 pf durchlassspannung forward voltage i f = 10 ma i f = 100 ma, t p = 20 ms i f = 1 a, t p = 100 s v f ? 1.5 ( 1.8) 3.0 ( 3.8) 2.0 ( 2.6) ? ? v sperrstrom, v r = 5 v reverse current i r 0.01 ( 1 ) 0.01 ( 10 ) a gesamtstrahlungsfluss total radiant flux i f = 100 ma, t p = 20 ms e 23 ? mw lichtst?rke luminous intensity i f = 2 ma i v ? >0.25 mcd temperaturkoeffizient von i e bzw. e temperature coefficient of i e or e i f = 100 ma tc i ? 0.5 ? 0.3 %/k
2007-04-02 4 sfh 7222 ired radiation characteristics i rel = f ( ? ) led directional characteristics s rel = f ( ? ) temperaturkoeffizient von v f temperature coefficient of v f i f = 100 ma tc v ? 2 ? 1.4 mv/k temperaturkoeffizient von temperature coefficient of i f = 100 ma tc + 0.25 0.30 ( peak ) 0.07 ( dom ) nm/k strahlst?rke i e der ired in achsrichtung gemessen bei einem raumwinkel = 0.01 sr radiant intensity i e of the ired in axial direction at a solid angle of = 0.01 sr bezeichnung description symbol symbol werte values einheit unit strahlst?rke radiant intensity i f = 100 ma, t p = 20 ms i e min. 4 mw/sr strahlst?rke radiant intensity i f = 1 a, t p = 100 s i e typ. 48 mw/sr kennwerte ( t a = 25 c) characteristics (cont?d) bezeichnung parameter symbol symbol wert value einheit unit ired led 0 0.2 0.4 1.0 0.8 0.6 ? 1.0 0.8 0.6 0.4 0? 10? 20? 40? 30? ohl01660 50? 60? 70? 80? 90? 100? 0? 20? 40? 60? 80? 100? 120?
sfh 7222 2007-04-02 5 ired forward current i f = f ( v f ) t a = 25 c max. permissible forward current i f = f ( t a ) 10 ohr00881 f v -3 -2 10 -1 10 0 10 1 10 0123456v8 a f ohr00883 0 f 0 20 40 60 80 100 120 20 40 60 80 100 120 ma ?c t a r thja = 450 k/w rel luminous intensity i v / i v(10 ma) = f ( i f ) t a = 25 c relative spectral emission i rel = f ( ) 10 ohr00878 e f -3 -2 10 -1 10 0 10 1 10 2 10 0 10 10 1 10 2 10 4 ma e (100ma) 3 10 0 750 rel ohr00877 800 850 900 950 nm 1000 20 40 60 80 % 100 perm. pulse handling capability i f = f ( t p ), duty cycle d = parameter, t a = 25 c 10 f ohr00886 1 2 10 3 10 4 10 ma -5 10 s = d f t dc 0.005 = d p t t t p p t 0.5 0.2 0.1 0.01 0.02 0.05 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2
sfh 7222 2007-04-02 6 led forward current i f = f ( v f ) t a = 25 c max. permissible forward current i f = f ( t a ) forward voltage v f = f ( t a ) i f = f ( t a ) 10 -1 v 5 green ohf00577 f f v 0 10 1 10 2 10 5 ma 1.0 1.4 1.8 2.2 2.6 3.0 3.4 1 chip on 2 chips on ma 35 30 25 20 15 10 5 ?c 0 i f 0 ohl00241 20 40 60 80 100 t a temp. ambient t green 1.4 ohf00581 v f ?c a t 0 20 40 60 80 100 1.6 1.8 2.0 2.2 v 2.4 relative luminous intensity i v / i v(10 ma) = f ( i f ), t a = 25 c wavelength at peak emission peak = f ( t a ), i f = 10 ma relative luminous intensity i v / i v(25 c) = f ( i f ), i f = 10 ma v v (10 ma) 10 -1 0 10 10 12 10 ma green 10 -3 5 ohf00578 f 5 -2 10 5 -1 10 0 10 1 10 55 green 550 ohf00579 peak ?c a t 0 20 40 60 80 100 570 590 610 630 650 nm 690 green 0.0 ohf00582 ?c a t 0 20 40 60 80 100 v v 0.4 0.8 1.2 1.6 2.0 (25 ?c) perm. pulse handling capability i f = f ( t p ) duty cycle d = parameter, t a = 25 c dominant wavelength dom = f ( t a ), i f = 10 ma ohl01686 s 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t d i t t p f t p = d = 0.005 0.01 0.02 0.05 0.2 0.5 dc 10 1 5 i f t 2 10 0.1 p 10 3 ma green 550 ohf00580 dom ?c a t 0 20 40 60 80 100 570 590 610 630 650 nm 690
sfh 7222 2007-04-02 7 ma?zeichnung package outlines ma?e in mm (inch) / dimensions in mm (inch). geh?use / package wei?, klarer verguss / white, clear resin anschlussbelegung pin configuration 1: kathode (cathode) 880nm 2: anode (anode) 880nm 3: kathode (cathode) 565nm 4: anode (anode) 565nm geoy7023 0.7 (0.028) 0.9 (0.035) 1.7 (0.067) 2.1 (0.083) 0.12 (0.005) 0.18 (0.007) 0.5 (0.020) 1.1 (0.043) 3.3 (0.130) 3.7 (0.146) 0.4 (0.016) 0.6 (0.024) 2.6 (0.102) 3.0 (0.118) 2.1 (0.083) 2.3 (0.091) package marking 3.0 (0.118) 3.4 (0.134) (2.4 (0.095)) 0.1 (0.004) (typ.) 0.8 (0.031) 0.6 (0.024) 14 23
2007-04-02 8 sfh 7222 empfohlenes l?tpaddesign recommended solder pad ma?e in mm (inch) / dimensions in mm (inch). ohlpy439 padgeometrie fr verbesserte w?rmeableitung improved heat dissipation paddesign for l?tstoplack solder resist 1.1 (0.043) 4.5 (0.177) 1.5 (0.059) 2.6 (0.102) 3.3 (0.130) 0.5 (0.020) 7.5 (0.295) 0.4 (0.016) cathode marking kathoden markierung / cu fl?che / 12 mm per pad 2 cu-area _ < 3.3 (0.130)
sfh 7222 2007-04-02 9 l?tbedingungen vorbehandlung nach jedec level 2 soldering conditions preconditioning acc. to jedec level 2 reflow l?tprofil fr bleifreies l?ten (nach j-std-020c) reflow soldering profile for lead free soldering (acc. to j-std-020c ) wellenl?ten (ttw) (nach cecc 00802) ttw soldering (acc. to cecc 00802) ohla0687 0 0 t t ?c s 120 s max 50 100 150 200 250 300 ramp up 100 s max 50 100 150 200 250 300 ramp down 6 k/s (max) 3 k/s (max) 25 ?c 30 s max 260 ?c +0 ?c -5 ?c 245 ?c 5 ?c 240 ?c 255 ?c 217 ?c maximum solder profile recommended solder profile 235 ?c -0 ?c +5 ?c minimum solder profile 10 s min ohly0598 0 0 50 100 150 200 250 50 100 150 200 250 300 t t c s 235 c 10 s c ... 260 1. welle 1. wave 2. welle 2. wave 5 k/s 2 k/s ca 200 k/s cc ... 130 100 2 k/s zwangskhlung forced cooling normalkurve standard curve grenzkurven limit curves
2007-04-02 10 sfh 7222 published by osram opto semico nductors gmbh wernerwerkstrasse 2, d-93049 regensburg www.osram-os.com ? all rights reserved. the information describes the type of component and shall not be considered as assured characteristics. terms of delivery and rights to change design reserv ed. due to technical requirements components may contain dangerous substances. for information on the types in question please contact our sales organization. packing please use the recycling operators known to you. we can also help you ? get in touch with your nearest sales office. by agreement we will take packing material back, if it is sorted. you must bear the costs of tr ansport. for packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. components used in life-support devices or system s must be expressly authorized for such purpose! critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of osram os. 1 a critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support de vice or system, or to affect its safety or effectiveness of that device or system. 2 life support devices or systems are intended (a) to be impl anted in the human body, or (b) to support and/or maintain and sustain human life. if they fail, it is reasonable to assume that the health of the user may be endangered.
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